Room A (301, 3rd Floor)
Room B (302, 3rd Floor)
Room E (311, 3rd Floor)
Room F (312, 3rd Floor)
Room G (313, 3rd Floor)
Room H (314, 3rd Floor)
Room J (411+412, 4th Floor)
Room K (413, 4th Floor)
Room M (414+415, 4th Floor)
Room N (416+417, 4th Floor)
JSTUTC
9:00 AMSep 18, 2025 12:00 AM
10:00 AM1:00 AM
11:00 AM2:00 AM
12:00 PM3:00 AM
1:00 PM4:00 AM
2:00 PM5:00 AM
3:00 PM6:00 AM
4:00 PM7:00 AM
01: Advanced CMOS: Material Science / Process Engineering / Device Technology(9:00 AM - 10:30 AM JST)
[A-5]

CFET Technology and Self-heating

Session Chair: Kuniyuki Kakushima (Science Tokyo), Satofumi Souma (Kobe Univ.)
Oral Presentation
01: Advanced CMOS: Material Science / Process Engineering / Device Technology(10:45 AM - 12:00 PM JST)
[A-6]

Integration Technology on Si Wafer

Session Chair: Shoichi Kabuyanagi (KIOXIA), Shibun Tsuda (Renesas Electronics Corp.)
Oral Presentation
01: Advanced CMOS: Material Science / Process Engineering / Device Technology(1:30 PM - 2:45 PM JST)
[A-7]

2D Material Integration

Session Chair: Keisuke Yamamoto (Kumamoto Univ.), Anabela Veloso (imec)
Oral Presentation
01: Advanced CMOS: Material Science / Process Engineering / Device Technology(3:15 PM - 4:15 PM JST)
[A-8]

Vertical FET and New Devices

Session Chair: Hiroyuki Ogawa (Rapidus Corp.), Takashi Matsukawa (AIST)
Oral Presentation
02: Advanced and Emerging Memories / New Applications(9:00 AM - 10:15 AM JST)
[B-5]

Ferroelectric FET

Session Chair: Toshinori Numata (Toyota Technological Inst.), Halid Mulaosmanovic (GlobalFoundries)
Oral Presentation
02: Advanced and Emerging Memories / New Applications(10:45 AM - 12:15 PM JST)
[B-6]

Emerging Memory Devices, and MRAM

Session Chair: Keiji Hosotani (KIOXIA Corp.), Yoshihiro Sato (Tohoku Univ.)
Oral Presentation
02: Advanced and Emerging Memories / New Applications(1:30 PM - 2:45 PM JST)
[B-7]

Ferroelectric Materials

Session Chair: Sanghun Jeon (KAIST), Kouichi Nagai (RAMXEED)
Oral Presentation
02: Advanced and Emerging Memories / New Applications(3:15 PM - 4:30 PM JST)
[B-8]

Ferroelectric Memory Materials

Session Chair: Ming-Hsiu Lee (Macronix International Co., Ltd.), Laurent Grenouillet (CEA-Leti)
Oral Presentation
09: Novel Functional / Quantum / Spintronic Devices and Materials(9:00 AM - 10:30 AM JST)
[E-5]

Qubit Technology

Session Chair: Jun Yoneda (The Univ. of Tokyo), Hidehiro Asai (AIST)
Oral Presentation
09: Novel Functional / Quantum / Spintronic Devices and Materials(10:45 AM - 12:00 PM JST)
[E-6]

Qubit Systems

Session Chair: Toshiyuki Miyazawa (Fujitsu Ltd.), Motoya Shinozaki (Tohoku Univ.)
Oral Presentation
06: Energy Harvesting and Converting Devices and Materials(1:30 PM - 2:45 PM JST)
[E-7]

Energy Related Materials

Session Chair: Yoshitaro Nose (Kyoto Univ.), Shogo Ishizuka (AIST)
Oral Presentation
07: Organic / Molecular / Bio‐electronics(9:00 AM - 10:15 AM JST)
[F-5]

Highly Sensitive Devices for Chem/Bio Detection 1

Session Chair: Woo-Tae Park (Seoul National Univ. of Science and Technology), Hisashi Kino (Kyushu Univ.)
Oral Presentation
07: Organic / Molecular / Bio‐electronics(1:30 PM - 2:45 PM JST)
[F-7]

Bio/Medical Electronics

Session Chair: Huang-Ming Philip Chen (National Yang Ming Chiao Tung Univ.), Ryugo Tero (Toyohashi Univ. of Technology)
Oral Presentation
05: Photonics: Devices / Integration / Related Technology(9:00 AM - 10:00 AM JST)
[G-5]

Photonic Computing

Session Chair: Kouichi Akahane (NICT), Keijiro Suzuki (AIST)
Oral Presentation
05: Photonics: Devices / Integration / Related Technology(10:45 AM - 11:45 AM JST)
[G-6]

Materials for Photodetector

Session Chair: Hideki Ono (OKI), Xuejun Xu (Nippon Telegraph and Telephone Corporation)
Oral Presentation
11: Advanced Materials: Synthesis / Crystal Growth / Characterization(9:00 AM - 10:15 AM JST)
[H-5]

Low Dimensional Materials I

Session Chair: Yuji Yamamoto (IHP GmbH), Yu-Lun Chueh (National Tsing-Hua Univ.)
Oral Presentation
11: Advanced Materials: Synthesis / Crystal Growth / Characterization(10:45 AM - 11:45 AM JST)
[H-6]

Low Dimensional Materials II

Session Chair: Shunjiro Fujii (Univ. of Hyogo), Takuya Hoshi (NTT Device Technology Lab.)
Oral Presentation
11: Advanced Materials: Synthesis / Crystal Growth / Characterization(1:30 PM - 2:45 PM JST)
[H-7]

Advanced Materials and Thin Films

Session Chair: Kentaro Watanabe (Shinshu Univ.), Tomohiro Yamaguchi (Kogakuin Univ.)
Oral Presentation
02: Advanced and Emerging Memories / New Applications(9:00 AM - 10:15 AM JST)
[J-5]

In-Memory and Unconventional Computing 2

Session Chair: Kazuyuki Kouno (Nuvoton Technology Corp. Japan), Yumeng Zheng (Tokyo Univ. of Science)
Oral Presentation
02: Advanced and Emerging Memories / New Applications(10:45 AM - 12:15 PM JST)
[J-6]

Emerging Memory Devices, and DRAM

Session Chair: Atsushi Himeno (Panasonic Holdings Corp.), Akiyoshi Seko (Micron Memory Japan, K.K.)
Oral Presentation
08: Low Dimensional Devices and Materials(9:00 AM - 10:15 AM JST)
[K-5]

Device II

Session Chair: Shu Nakaharai (Tokyo Univ. of Tech.), Takamasa Kawanago (AIST)
Oral Presentation
08: Low Dimensional Devices and Materials(10:45 AM - 11:45 AM JST)
[K-6]

Characterization III

Session Chair: Shinjiro Hara (NIMS), Takeshi Yanagida (The Univ. of Tokyo)
Oral Presentation
08: Low Dimensional Devices and Materials(1:30 PM - 2:30 PM JST)
[K-7]

Device III

Session Chair: Takamasa Kawanago (AIST), Yusuke Hoshi (Tokyo City Univ.)
Oral Presentation
08: Low Dimensional Devices and Materials(3:15 PM - 4:00 PM JST)
[K-8]

Device IV

Session Chair: Masafumi Jo (RIKEN), Shinjiro Hara (NIMS)
Oral Presentation
04: Power / High‐speed Devices and Materials(9:00 AM - 10:15 AM JST)
[M-5]

Emerging Materials and Devices

Session Chair: Joel T. Asubar (Univ. of Fukui), Taketomo Sato (Hokkaido Univ.)
Oral Presentation
04: Power / High‐speed Devices and Materials(10:45 AM - 12:00 PM JST)
[M-6]

III-V High-frequency and Power Devices

Session Chair: Takuya Tsutsumi (Osaka Metropolitan Univ.), Yue-ming Hsin (National Central Univ.)
Oral Presentation
04: Power / High‐speed Devices and Materials(1:30 PM - 2:45 PM JST)
[M-7]

Technologies for GaN HEMTs

Session Chair: Joel T. Asubar (Univ. of Fukui), Taketomo Sato (Hokkaido Univ.)
Oral Presentation
04: Power / High‐speed Devices and Materials(3:15 PM - 4:30 PM JST)
[M-8]

Si Materials and Devices

Session Chair: Tsuyoshi Kachi (Toshiba Device & storage), Yue-ming Hsin (National Central Univ.)
Oral Presentation
10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process(9:00 AM - 10:00 AM JST)
[N-5]

Ferroelectric Memories and Gate Stack

Session Chair: Toshiya Murakami (KIOXIA), Hiroyuki Nishinaka (Kyoto Inst. of Technology)
Oral Presentation