[A-3] Gate stack engineering 2

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[A-3-06] A Novel TEMAZ Treatment Technique Enabling Fine V_FB Modulation and EOT Reduction for Si_0.7Ge_0.3 MOSCAPs

〇Kaimin Feng^1,2, Huaizhi Luo¹, Yongliang Li^1,2 (1. Institute of Microelectronics of the Chinese Academy of Sciences (China), 2. School of Integrated Circuits, University of Chinese Academy of Sciences (China))