[A-3] Gate stack engineering 2 | 2026 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[A-3]Gate stack engineering 2

Wed. Sep 16, 2026 8:30 AM - 9:30 AM JST
Wed. Sep 16, 2026 11:30 PM - 12:30 AM UTC

Room A(Convention Hall 1, 2rd Floor)

Session Chair:Hiroyuki Ogawa(Rapidus Corporation), Shibun Tsuda(Renesas Electronics Corporation)

8:30 AM - 8:45 AM JST(11:30 PM - 11:45 PM UTC)

[A-3-01]Quantitative Evaluation of the Effect of Spike RTA and Cyclic DHF/O₃ Cleaning on Ge Residue and Device Properties for GAAFET Performance Enhancement

〇Ryutaro Nishino¹, Chia-Tsong Chen¹, Yukinori Morita¹, Naoto Kumagai¹, Hiroyuki Ota¹, Kazuya Uejima¹, Atsushi Yagishita¹, Toshifumi Irisawa¹, Yoshihiro Hayashi¹ (1. ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan))

8:45 AM - 9:00 AM JST(11:45 PM - 12:00 AM UTC)

[A-3-02]Effects of Nitrogen Radical Treatment on the Reliability of High-k Gate Dielectrics Contributing to Gate-All-Around Technology

〇Honoka Kido¹, Mizuki Yano¹, Hiroki Kondo¹ (1. Kyushu Univ. (Japan))

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[A-3-03]Dual WFM Patterning in mCFET RMG: Understanding Patterning Limitations and Enabling Scalable Solutions

〇Camila Toledo de Carvalho Cavalcante¹, Hiroaki Arimura¹, Pallavi Puttarame Gowda¹, Kenneth Lai¹, Efrain Altamirano Sanchez¹, Dmitry Batuk¹, Thomas Chiarella¹, Jerome Mitard¹, Violeta Georgieva¹, Harinarayanan Puliyalil¹, Sujith Subramanian¹, Lucas Petersen Barbosa Lima¹, Steven Demuynck¹, Naoto Horiguchi¹, Serge Biesemans¹ (1. imec (Belgium))

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[A-3-04]Flat-Band Voltage Control and Variability Using an Ultra-Thin Al₂O₃ Dipole Layer: Analysis of Dipole and Fixed Charges

〇Takefumi Kamioka^1,6, Toshihide Nabatame^2,6, Hiroki Matsukawa^3,6, Takamasa Kawanago^1,6, Yukinori Morita^1,6, Kasidit Toprasertpong^3,6, Yuichiro Mitani^4,6, Takashi Onaya^2,6, Naoki Fukata^2,6, Wipakorn Jevasuwan^2,6, Kazuhito Tsukagoshi^2,6, Takuya Hoshii^5,6, Atsushi Tamura^3,6, Koji Kita^3,6, Naoya Okada^1,6, Kenzou Manabe^1,6, Wataru Mizubayashi^1,6, Hiroyuki Ota^1,6, Takashi Matsukawa^1,6, Shinji Migita^1,6 (1. AIST (Japan), 2. NIMS (Japan), 3. The Univ. of Tokyo (Japan), 4. Tokyo City Univ. (Japan), 5. Science Tokyo (Japan), 6. LSTC (Japan))

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