[A-5] GAA FET

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[A-5-04] A Novel Trench-Free SiGe Channel GAA Nanosheet Transistor with Reduced Gate Capacitance and Improved Circuit Performance

〇Fei Zhao¹, Haoyan Liu¹, Xiaofeng Jia¹, Yan Li², Yongliang Li¹ (1. Inst. of Microelectronics, Chinese Academy of Science (China), 2. Beijing Information Science and Technology University (China))