[PS-04] 04: Power / High‐speed Devices and Materials

[PS-04-01] Enhancement-Mode Recessed-Gate InAlGaN/GaN HEMTs with HfAlO Gate Dielectric and Gate Field Plate

〇Chung-Che Shen¹, Yi-Hsuan Chang¹, Yan-Kuei Wu¹, Wei-Chou Hsu^1,2 (1. Inst. of Microelectronics, Dept. of Electrical Eng., National Cheng Kung Univ. (Taiwan), 2. Academy of Innovative Semiconductor and Sustainable Manufac., National Cheng Kung Univ. (Taiwan))