Presentation Information

[PS-04-03]Fin Geometry Effects on Device Characteristics in Wide-Width 30V HV FinFETs for 3D NAND Periphery

〇Sohyeon LEE1,2, Jimyoung LEE1,2, Jongwook Jeon1 (1. Sungkyunkwan Univ. (Korea), 2. Samsung Electronics (Korea))