Presentation Information
[PS-04-04]β-Ga2O3 Heterostructure Lateral Schottky Diode Fabricated via Mist-CVD
〇Kai-Ting Chang1, Hao-Chun Hung2, Chia-Cheng Hsu2, Rong-Ming Ko2, Wei-Chou Hsu2 (1. National Cheng Kung Univ. Inst. of Microelectronics Eng. (Taiwan), 2. National Cheng Kung Univ. Academy of Innovative Semiconductor and Sustainable Manufac. (Taiwan))
