Presentation Information
[PS-04-05]Enhancement-Mode InAlN/GaN MIS-HEMTs Enabled by a HfO2-Based Plasma-Induced-Oxidation Charge-Trapping Layer
〇Peiran Wang1, Ziyang Wang1, Shoucheng Xu1, Wenchuan Tao1, Nick Tao2, Hongyu Yu3, Qing Wang1 (1. Southern University of Science and Technology (China), 2. Maxscend Microelectronics Co., Ltd. (China), 3. School of Integrated Circuit, Shenzhen Polytechnic University (China))