Presentation Information
[PS-04-06]Measurement and Simulation of Hot Carrier Effects Induced Degradations in 1200 V Silicon Carbide Power MOSFETS under Direct Current Stress
〇Wenkai Li1, Shilong Dai1, Guowei Ma1, Yidan Tang2, Pengying Chang1 (1. Beijing Univ. of Technology (China), 2. Inst. of Microelectronics of the Chinese Academy of Sciences (China))