Presentation Information
[PS-04-12]Electrical Characteristics of Nitrogen-Doped Current Blocking Layer for Vertical Diamond MOSFETs
〇Ryo Yoshida1,2, Nobutaka Oi1, Shunsuke Shoji1,2, Akihiko Watanabe3, Ichiro Omura3, Kenji Ueda2, Tatsuya Fujishima1 (1. Power Diamond Systems Inc. (Japan), 2. Waseda Univ. (Japan), 3. Kyushu Inst. of Tech. (Japan))