[PS-04] 04: Power / High‐speed Devices and Materials

[PS-04-17] Physical Origin and Suppression of Geometric Components in Charge Pumping of 4H-SiC nMOSFETs

〇Shuto Oi¹, Mitsuru Sometani², Hirohisa Hirai², Mitsuo Okamoto², Tetsuo Hatakeyama¹ (1. Toyama Prefectural Univ. (Japan), 2. National Inst. of Advanced Industrial Science and Technology (AIST) (Japan))

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