Presentation Information
[PS-04-17]Physical Origin and Suppression of Geometric Components in Charge Pumping of 4H-SiC nMOSFETs
〇Shuto Oi1, Mitsuru Sometani2, Hirohisa Hirai2, Mitsuo Okamoto2, Tetsuo Hatakeyama1 (1. Toyama Prefectural Univ. (Japan), 2. National Inst. of Advanced Industrial Science and Technology (AIST) (Japan))