Presentation Information
[PS-05-07]High temperature PVD AlN buffer growth on Si (111) for epitaxial Ga(Al)N
〇Houssem BOUKHALFA1、Mathieu Bernard2、Fabrice Perrin2、Helen Zhao3、Dan Deyo4、Shiva Rai5、Guillaume Rodriguez2、Lavinia E. Nistor1 (1. Applied Materials (France), 2. CEA LETI, Minatec, Univ. Grenoble Alpes (France), 3. Applied Materials (China), 4. Applied Materials (USA), 5. Applied Materials, Inc. (USA))