Presentation Information
[PS-08-03]Impact of Gate Metal Adhesion Layers on Gate Dielectric Properties in Wet-Transferred MoS2/Al2O3 Bottom-Gated MOSFETs
〇Shiho Nakamura1, Yuanyuan Shi2, Xiao Yu3, Nobuyuki Aoki1, Mengnan Ke4 (1. Chiba Univ. (Japan), 2. Univ. of Sci. and Tech. of China (China), 3. Xidian Univ. (China), 4. Yokohama National Univ. (Japan))