Presentation Information
[PS-08-10]Formation of stable HfO2/MoS2 interfaces by off-axis e-beam evaporation under controlled O2 partial pressure
〇Hiroyasu Maekawa1, Jui-Teng Chang1, Tomonori Nishimura1, Kaito Kanahashi1, Yoshiki Sakuma2, Kosuke Nagashio1 (1. The University of Tokyo (Japan), 2. NIMS (Japan))