Presentation Information
[PS-11-06]GaN-Drain Si nMOSFETs with Enhanced Breakdown Voltage via Selective Area Integration
〇Cheng-Jun Huang1, Shuo Hwai3, Tsai-Fu Chung1, Chien-Nan Hsiao3, Edward. Yi Chang1, Mau-Chung Frank Chang2 (1. National Yang Ming Chiao Tung University (Taiwan), 2. University of California, Los Angeles (USA), 3. National Applied Research Laboratories, Taiwan Instrument Research Institute (Taiwan))