[SO-PS-01] 01: Advanced CMOS: Material Science / Process Engineering / Device Technology

1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-01-13] Significant performance improvement of GeSn-based RTD through interface planarization by Ge buffer introduction and H₂ pressure control in MBE

〇Shigehisa Shibayama¹, Shota Torimoto¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1. Grad. Sch. of Eng., Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan))