2026 International Conference on Solid State Devices and Materials
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Tue. Sep 15, 2026
Wed. Sep 16, 2026
Thu. Sep 17, 2026
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1:38 PM - 1:40 PM JST
(4:38 AM - 4:40 AM UTC)
[SO-PS-09-05]
Raman-ion-gating reservoir realized with MoS
2
electric double-layer transistor.
〇Yoshitaka Shingaya
1
, Daiki Nishioka
1
, Kazuya Terabe
1
, Takashi Tsuchiya
1
(1. NIMS (Japan))
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