[SO-PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-11-01] Crystallinity-Dependent Selective Etching of SiGe for Next-Generation Transistors

〇Tomoki Tokunaga^1,2, Shuma Akiyoshi^1,2, Takashi Kajiwara^1,2, Koji Usuda³, Toshifumi Irisawa^2,4, Atsushi Ogura³, Taizoh Sadoh^1,2 (1. Kyushu Univ. (Japan), 2. LSTC (Japan), 3. Meiji Univ. (Japan), 4. AIST (Japan))