Presentation Information

[SO-PS-11-01]Crystallinity-Dependent Selective Etching of SiGe for Next-Generation Transistors

〇Tomoki Tokunaga1,2, Shuma Akiyoshi1,2, Takashi Kajiwara1,2, Koji Usuda3, Toshifumi Irisawa2,4, Atsushi Ogura3, Taizoh Sadoh1,2 (1. Kyushu Univ. (Japan), 2. LSTC (Japan), 3. Meiji Univ. (Japan), 4. AIST (Japan))

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