[SO-PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-11-06] GaN-Drain Si nMOSFETs with Enhanced Breakdown Voltage via Selective Area Integration

〇Cheng-Jun Huang¹, Shuo Hwai³, Tsai-Fu Chung¹, Chien-Nan Hsiao³, Edward. Yi Chang¹, Mau-Chung Frank Chang² (1. National Yang Ming Chiao Tung University (Taiwan), 2. University of California, Los Angeles (USA), 3. National Applied Research Laboratories, Taiwan Instrument Research Institute (Taiwan))