[C-3] Spintronics | 2026 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation09: Novel Functional / Quantum / Spintronic Devices and Materials

[C-3]Spintronics

Wed. Sep 16, 2026 8:30 AM - 9:45 AM JST
Wed. Sep 16, 2026 11:30 PM - 12:45 AM UTC

Room C(101A, 1st Floor)

Session Chair:Shutaro KARUBE(Kyoto Univ.), Motoya Shinozaki(Tohoku Univ.)

8:30 AM - 9:00 AM JST(11:30 PM - 12:00 AM UTC)

[C-3-01 (Invited)]Efficient spin-charge conversion at room temperature with ferroelectrics: Enabling FESO

〇Manuel Bibes¹ (1. Laboratoire Albert Fert (France))

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[C-3-02]Single-Layer Spin–Orbit Torque Magnetization Switching in Compressively Strained SrRuO₃ on a Distorted Perovskite Substrate

〇Hiroto Horiuchi¹, Jeyoung Yi¹, Yuki K Wakabayashi², Yukio Sato³, Yoji Kunihashi², Yoshiharu Krockenberger², Masaaki Tanaka^1,4,5, Shinobu Ohya^1,4,5 (1. Dept. of Electrical Eng. and Info. Systems, The Univ. of Tokyo (Japan), 2. Basic Res. Labs, NTT, Inc. (Japan), 3. Res. and Edu. Inst. for Semiconductors and Informatics, Kumamoto Univ. (Japan), 4. CSRN, The Univ. of Tokyo (Japan), 5. Inst. for Nano Quantum Info. Electronics, The Univ. of Tokyo (Japan))

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[C-3-03]Thickness Dependence of Magnetic Damping and Spin Transport in Topological Insulator Bi₂Te₃/Ferromagnetic CoFeB

〇Misako Morota¹, Shugo Yoshii², Masashi Shiraishi², Wipakorn Jevasuwan³, Naoki Fukata³, Shogo Hatayama¹ (1. AIST (Japan), 2. Kyoto Univ. (Japan), 3. NIMS (Japan))

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[C-3-04]Robust Circularly Polarized Electroluminescence against High Bias Voltages in Spin-Polarized Light-Emitting Diode with Thin MgO Tunnel Barrier

〇Shinnosuke Wada¹, Itsu Tanaka¹, Daiki Mineyama¹, Ayano Morita¹, Hiroto Kise¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1. Hokkaido Univ. (Japan))

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