講演情報
[19p-B3-18]Effect of Oxygen Terminal Surface Adsorption Layer on Energy Dissipation in Single-Crystal Diamond MEMS
〇Keyun Gu1,2, Zilong Zhang3, Wen Zhao1, Guo Chen1, Jian Huang2, Satoshi Koizumi1, Yasuo Koide1, Meiyong Liao1 (1.National Institute for Materials Science, 2.Shanghai University, 3.Tohoko University)
キーワード：
Diamond MEMS
Single-crystal diamond (SCD) presents as a promising candidate for the achievement of low mechanical dissipation or high quality (Q) factors for high-sensitivity and high signal-to-noise (SNR) ratio microelectromechanical systems (MEMS) sensors by virtue of its outstanding mechanical characteristic, high thermal conductivity, excellent electronic properties, and the characteristics of non-grain boundary and non-impurity phase [1-3]. The SCD MEMS resonators were fabricated by Ion implantation-assisted smart-cut technique [4,5]. The effect of the ion-irradiation induced defective layer has been minimized and the Q factor has been achieved over one million through atomic etching [6]. Nevertheless, how the surface terminal adsorption characteristics of diamond affects the Q factors of SCD MEMS is still mysterious. Therefore, the clarification of the oxygen-termination effect is critical to achieve the ultra-high Q factor MEMS resonators.
In this work, we clarify the effect of oxygen terminal surface adsorption characteristic on the resonance behavior of SCD MEMS resonator. We examine the Q factors and resonance frequencies of the SCD MEMS resonators with the defective layer removed in a high vacuum chamber by in-situ heating and cooling. Based on ultrahigh stability of resonance characteristic of SCD resonator at room temperature (RT) and high temperature (from 313 K to 933 K), the Q factors are significantly improved after heating processing. The Q factor of the 80 μm-long cantilever is improved from 1.0x105 to 1.2x105 and the resonance frequency increases, as shown in Fig.1. We clarify that the desorption of the absorbates on the oxygen-terminated diamond surface induces the lower surface energy dissipation and higher Q factor. Hence, appropriate surface treatments are necessary for the development of MEMS devices with low energy dissipation and high sensitivity.
In this work, we clarify the effect of oxygen terminal surface adsorption characteristic on the resonance behavior of SCD MEMS resonator. We examine the Q factors and resonance frequencies of the SCD MEMS resonators with the defective layer removed in a high vacuum chamber by in-situ heating and cooling. Based on ultrahigh stability of resonance characteristic of SCD resonator at room temperature (RT) and high temperature (from 313 K to 933 K), the Q factors are significantly improved after heating processing. The Q factor of the 80 μm-long cantilever is improved from 1.0x105 to 1.2x105 and the resonance frequency increases, as shown in Fig.1. We clarify that the desorption of the absorbates on the oxygen-terminated diamond surface induces the lower surface energy dissipation and higher Q factor. Hence, appropriate surface treatments are necessary for the development of MEMS devices with low energy dissipation and high sensitivity.
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