講演情報
[22p-13P-6]Optimization of device parameters in the chalcogenide-based multilayer monolithic thermoelectric generators
〇(PC)Artoni Ang1, Itsuki Yamazaki1, Saurabh Singh2, Masaharu Matsunami1, Tsunehiro Takeuchi1 (1.Toyota Tech. Inst., 2.Inst. Sci. Tech. Austria)
キーワード：
Thermoelectric generator、Chalcogenides
Thermoelectric generators (TEGs) have emerged as one of the viable sources for clean and renewable energy, particularly for small wireless devices and sensors used in the internet-of-things (IoT). TEGs are capable of harvesting waste heat in the environment and directly converting it to useful electricity. However, typical commercial TEGs are composed of Bi2Te3 thermoelectric (TE) materials in a π-type device architecture. These materials are fragile and composed of toxic and expensive elements, and this device structure requires a complicated assembly process, with several high temperature steps.
We have reported the development of a chalcogenide-based multilayer monolithic TEG device architecture that can significantly simplify the fabrication process and reduce the processing temperatures required [1-2]. We used high performance n-type Ag1.97V0.03S0.55Se0.45 (max zT = 0.7 at 350K) [3], and p-type Cu2.075Se (max zT = 0.7 at 380K) as alternatives to the Bi2Te3-based materials typically used in TEG applications, and was able to prepare dense and robust prototype devices that can generate ~700 μW/cm2 at a ΔT=30K. While the performance of these devices was comparable, if not better, than similar multilayer monolithic TEG devices reported in the literature, further improvements are necessary to be able to compete with the best TEG devices.
To further improve the power generation of the device, device parameter optimization was performed by means of finite element method (FEM) optimization using COMSOL Multiphysics. Simulations showed that by optimizing the device structure, the power density of the device can be increased to at least four times larger compared to the previously prepared 3-pair device. Taking these structural optimizations into account, new TEG prototype devices were fabricated and characterized.
We have reported the development of a chalcogenide-based multilayer monolithic TEG device architecture that can significantly simplify the fabrication process and reduce the processing temperatures required [1-2]. We used high performance n-type Ag1.97V0.03S0.55Se0.45 (max zT = 0.7 at 350K) [3], and p-type Cu2.075Se (max zT = 0.7 at 380K) as alternatives to the Bi2Te3-based materials typically used in TEG applications, and was able to prepare dense and robust prototype devices that can generate ~700 μW/cm2 at a ΔT=30K. While the performance of these devices was comparable, if not better, than similar multilayer monolithic TEG devices reported in the literature, further improvements are necessary to be able to compete with the best TEG devices.
To further improve the power generation of the device, device parameter optimization was performed by means of finite element method (FEM) optimization using COMSOL Multiphysics. Simulations showed that by optimizing the device structure, the power density of the device can be increased to at least four times larger compared to the previously prepared 3-pair device. Taking these structural optimizations into account, new TEG prototype devices were fabricated and characterized.