講演情報
[23a-12D-11]Observation of the orbital Hall effect in Si using spin-torque ferromagnetic resonance
〇(B)Ryoga Matsumoto1, Katsuhiro Tatsuoka1,2, Motomi Aoki1,2, Ryo Ohshima1,2, Yuichiro Ando1,2, Masashi Shiraishi1,2 (1.Kyoto Univ., 2.CSRN Kyoto Univ.)
キーワード：
semiconductor、orbital Hall effect、spin-torque ferromagnetic resonance
The orbital Hall effect (OHE), where an application of an electric current gives rise to the transverse flow of orbital angular momentum (orbital current), has been attracting tremendous attention. Whereas the spin-orbit torque (SOT) driven by the spin Hall effect requires materials with a large spin-orbit coupling (SOC), the OHE takes place in light elements such as Ti, Cr, Mn, and so on, which can overcome the limitation of the material choice for the SOT devices. Although the conventional studies on the OHE focused only on metallic materials, expansion of material platforms to the other materials systems with a small SOC are quite significant. In line with the research direction, the OHE in Si by using spin-torque ferromagnetic resonance (ST-FMR) is investigated in this study based on theoretical prediction of a sizable orbital Hall conductivity in Si.