[23a-12D-1~11] 10.2 スピン基盤技術・萌芽的デバイス技術

11:00 〜 11:15奨励賞エントリー英語発表

[23a-12D-8] Cation-induced tuning of THz-band antiferromagnetic resonance frequency for the NiO

〇Kenji Nawa^1,2, Andi Gumarilang¹, Takahiro Moriyama^3,4, Kohji Nakamura¹ (1.Mie Univ., 2.NIMS, 3.Nagoya Univ., 4.PRESTO, JST)

キーワード：

Antiferromagnetic resonance、Impurity doping、First-principles calculations

Antiferromagnetic materials that facilitate spin dynamics in THz frequency range have been paid much attention in the spintronics field, and recent experiments reported the modulation of THz frequency using cation-doped NiO. In this talk, we report first-principles results on the THz antiferromagnetic resonance frequencies of NiO that vary over a wide frequency range by the cation doping, 0.77~1.69 THz.