講演情報
[23p-12D-13]Gate-voltage control of anisotropic magnetoresistance in Fe4N film
〇(D)Shugo Yoshii1, Ryo Ohshima1,2, Shinji Isogami3, Yuichiro Ando1,2, Masashi Shiraishi1,2 (1.Kyoto Univ., 2.CSRN, Kyoto Univ., 3.NIMS)
キーワード：
Magneto ionics、Gate voltage control
Magnetic alloys comprising light elements such as N, C, and B have been attracting attention due to its unique magnetic properties. Especially, Fe4N is promising materials for spintronics applications because of magnetoresistance depending on the site of N ions such as inverse tunnelling magnetoresistance (TMR), inverse current-induced magnetization switching, and negative anisotropic magnetoresistance (AMR). Since N ion in metallic materials is known to be easily moved by applying gate voltage [4], gate-voltage application to Fe4N is expected to provide novel platform for tunable spintronics devices. In this study, we aimed to modulate AMR signals by moving nitrogen via application of gate voltage.