講演情報
[23p-21B-11]Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Widths
〇(DC)Zhiping Bian1, Mitsuki Yoshimura1, Ahrong Jeong2, Haobo Li3, Takashi Endo2, Yasutaka Matsuo2, Yusaku Magari2, Hidekazu Tanaka3, Hiromichi Ohta2 (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ., 3.SANKEN-Osaka Univ.)
キーワード：
Thermal transistors、Thermal Conductivity、LaNiOx
Thermal transistors that switch the thermal conductivity (κ) are recently attracting increasing attention as future thermal management devices. Recently, we realized the solid-state thermal transistors using SrCoOx (2 ≤ x ≤ 3) as the active material and YSZ as the solid electrolyte[1]. This work overcomes the problem of liquid electrolytes. We then clarified the way to improve the on/off κ ratio through an investigation of perovskite cobalt oxide-based solid solutions. We found that enhancing the electron thermal conductivity is beneficial for enhancing thermal conductivity in the on state, while disordered oxygen vacancies reduce thermal conductivity[2].
Here we show that LaNiOx-based electrochemical thermal transistors exhibit a large κ width of 4.3 W m−1 K−1. Fully oxidized LaNiO3 (on state) shows a high κ of 6.0 W m−1 K−1 due to the remarkably large contribution of electron thermal conductivity (3.1 W m−1 K−1). On the contrary, reduced LaNiO3−δ (off state) shows a low κ of 1.7 W m−1 K−1 due to that the phonons are scattered by the oxygen vacancies. The thermal transistor shows good reversible and cycling properties.
The LaNiOx-based electrochemical thermal transistor exhibits excellent cyclability of κ as well as the crystalline lattice of LaNiOx. The present electrochemical thermal transistor may be applied to next-generation devices such as thermal displays.
Here we show that LaNiOx-based electrochemical thermal transistors exhibit a large κ width of 4.3 W m−1 K−1. Fully oxidized LaNiO3 (on state) shows a high κ of 6.0 W m−1 K−1 due to the remarkably large contribution of electron thermal conductivity (3.1 W m−1 K−1). On the contrary, reduced LaNiO3−δ (off state) shows a low κ of 1.7 W m−1 K−1 due to that the phonons are scattered by the oxygen vacancies. The thermal transistor shows good reversible and cycling properties.
The LaNiOx-based electrochemical thermal transistor exhibits excellent cyclability of κ as well as the crystalline lattice of LaNiOx. The present electrochemical thermal transistor may be applied to next-generation devices such as thermal displays.