講演情報
[23p-22C-10]The Impact of n-type PCBM Doping on Tin Halide Perovskite Solar Cells Performance
〇Ajay Kumar Baranwal1, Huan Bi1, Qing Shen1, Shuzi Hayase1 (1.Univ. Electro-Comm.)
キーワード：
Heterojunction、Tin halide perovskite、PCBM
Lead-halide perovskite solar cells are among the fastest-growing solar cell technologies. However, the toxicity concerns of these solar cells have led to extensive exploration of lead-free perovskite materials as potential alternatives. Among these lead-free perovskite materials, tin halide has exhibited similar optoelectronic properties, including excellent absorption coefficient, low exciton binding energy, high charge mobility, and excellent photo-luminescent quantum yield when compared to their lead halide counterparts.
Tin halide perovskite demonstrates high p-mobility. Previous research has shown that treating the tin halide perovskite surface with a Lewis base can convert its surface properties from p-type to n-type, resulting in a significantly improved electron collection rate and thereby supporting increased photoconversion efficiency. Inspired by these results, we fabricated tin halide perovskite solar cells utilizing the n-type electronic properties of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). We integrated PCBM into the tin halide perovskite ink, creating a modified perovskite ink for fabricating tin halide perovskite solar cells in an inverted structure. This approach effectively distributed PCBM along the grain boundaries within the bulk of tin halide perovskite. As a result, we achieved an enhanced photoconversion efficiency (PCE) of 12.68 % (short circuit current density (Jsc)=23.85 mA/cm2, open circuit voltage (Voc)= 0.73V, fill factor (FF)=0.72) compared to the 10.25% of reference cells (Jsc= 22.51 mA/cm2, Voc=0.69 V, FF= 0.66). This outcome was further validated using DFT calculation. DFT calculation showed that the defect sites of Sn-perovskite would be effectively compensated by the PCBM coordination. However, the limited solubility of PCBM in the DMF:DMSO solvent system hinders further enhancements in PCE. This challenge will be addressed and discussed at the conference.
Tin halide perovskite demonstrates high p-mobility. Previous research has shown that treating the tin halide perovskite surface with a Lewis base can convert its surface properties from p-type to n-type, resulting in a significantly improved electron collection rate and thereby supporting increased photoconversion efficiency. Inspired by these results, we fabricated tin halide perovskite solar cells utilizing the n-type electronic properties of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). We integrated PCBM into the tin halide perovskite ink, creating a modified perovskite ink for fabricating tin halide perovskite solar cells in an inverted structure. This approach effectively distributed PCBM along the grain boundaries within the bulk of tin halide perovskite. As a result, we achieved an enhanced photoconversion efficiency (PCE) of 12.68 % (short circuit current density (Jsc)=23.85 mA/cm2, open circuit voltage (Voc)= 0.73V, fill factor (FF)=0.72) compared to the 10.25% of reference cells (Jsc= 22.51 mA/cm2, Voc=0.69 V, FF= 0.66). This outcome was further validated using DFT calculation. DFT calculation showed that the defect sites of Sn-perovskite would be effectively compensated by the PCBM coordination. However, the limited solubility of PCBM in the DMF:DMSO solvent system hinders further enhancements in PCE. This challenge will be addressed and discussed at the conference.