講演情報
[24p-12E-5]Evaluation on the Effect of Irradiation Damage of Si(100) Protected by CubeSats Shielding Materials Against High-energy Proton.
〇(M2C)YUTZU TSENG1, KuanChe Lan1,6, TzuHsiang Lin1, YiJun Yan6, ChingCheng Chen6, WeiCheng Chang2,6, LiFang Chen4, FanYi Ouyang1,2,6, ShihHsun Chen3, MingWei Lin1,6, YungChun Wu1,6, Hsiao-Ming Tung4, ShengLong Jeng4, ChienKai Tseng5, ChihJie Lin5, YiXian Tsai5 (1.Institute of Nuclear Engineering and Science,National Tsing Hua Univ., 2.College of Semiconductor Research, National Tsing Hua Univ., 3.Department of Mechanical Engineering, National Yang Ming Chiao Tung Univ., 4.Department of Material Research, National Atomic Research Inst., 5.Taiwan Space Agency, 6.Department of Engineering and System Science, National Tsing Hua Univ.)
キーワード：
Radiation damage of silicon、CubeSats shielding、high-entropy alloy (HEA)
CubeSats suffer the impact of cosmic radiation which could cause malfunctions and the early retirement during operation in low Earth orbit (LEO). To improve the service life of CubeSats domestically produced in Taiwan, the shielding mechanism from proton radiation for electronic devices of LEO satellites is necessary. A better understanding on how does high-energy protons damage the vulnerably components from the perspective of material science is the key to design an effective shield for LEO satellites. In this study, aluminum alloy 6061(AA6061) coated with a high-entropy alloy (HEA) has been employed as the shielding material with a monocrystalline P-type silicon wafer placed behind. To test shielding performance, the 30 MeV proton radiation with a target fluence of 10^15(#/cm2) has been applied. Through post irradiation examinations by X-ray diffraction (XRD), transmission electron microscopy (TEM),and four-point probe measurements, variations in crystalline structure and electronical resistivity of the monocrystalline silicon before and after irradiation facilitate investigation on the effectiveness of the shielding material. Results showed that the degradation in crystallinity and the increase in resistivity of the monocrystalline silicon behind the AA6061 with coating can be significantly mitigated compared to the results of the silicon with the AA6061 without coating .