講演情報
[24p-P05-2]Enhancing the Hole Gas Accumulation in Ge/Si Core-Shell Vertical Nanowires Array through the Fabrication of Ge/Si Core-Shell Vertical Nanosheets Array.
〇(D)Guanghui WANG1,2, Chao Le1,2, Wipakorn JEVASUWAN2, Naoki Fukata1,2 (1.Univ. of Tsukuba, 2.NIMS)
キーワード：
semiconductor、silicon、nanosheets
The Ge/Si core-shell vertical nanowires (CS-VNWs) have attracted considerable attention for next generation high performance semiconductor devices due to their larger heterostructure area and ability of miniaturization. However, the production processes of nanowires are not compatible with standard industrial manufacturing methods for devices. Furthermore, the effective width of CS-VNWs is less than that of Ge/Si core-shell Vertical Nanosheets (CS-VNSs) of the same size, hindering further optimization of the hole gas accumulation. Therefore, we demonstrate a CS-VNSs array production process, expected to further enhance the hole gas accumulation caused by CS-VNWs by improve the effective width. This preparation of CS-VNSs introduces a novel approach, enhancing the hole gas accumulation and advancing the integration and miniaturization of semiconductor devices for future applications.