講演情報
[24p-P05-3]Silicon Carbide Formation on Silicon Nanostructures via Carbonization
〇Pengyu ZHANG1,2, Naoki Fukata1,2, Wipakorn JEVASUWAN2, Yonglie Sun2 (1.Tsukuba Univ., 2.NIMS)
キーワード：
SiC、nanostructure
One-dimensional (1D) nanostructures, nanowires (NWs), and nanotubes (NTs) represent a successful extension of silicon (Si)-based industrial products. These structures offer advantages such as large junction areas, high integration density, and significant specific surface areas. Moreover, carbon (C)-based materials like and silicon carbide (SiC) are biocompatible and do not adversely affect cells or tissues, making them highly desirable for biological applications. We are currently exploring NW structures coated with various materials, focusing on the fabrication of nanostructured Si/SiC core-shell structures and SiC NTs, anticipated for use in biomedical and quantum sensing fields.
This study aims to develop a method for achieving high-quality, special 1D structures through chemical vapor deposition (CVD), growing SiC on Si core-shell NW structures. The research contributes to expanding the practical applications of these nanostructures in diverse advanced domains.
This study aims to develop a method for achieving high-quality, special 1D structures through chemical vapor deposition (CVD), growing SiC on Si core-shell NW structures. The research contributes to expanding the practical applications of these nanostructures in diverse advanced domains.