講演情報
[25a-P01-43]Variation of magnetization switching properties of magnetic tunnel junctions in artificial spin ice structures
〇Hitoshi Kubota1, Sumito Tsunegi1, Kay Yakushiji1, Tomohiro Taniguchi1, Shingo Tamaru1, Tatsuya Yamamoto1, Atsushi Sugihara1, Ryo Matsuura2, Hikaru Nomura2,3,4, Teijiro Isokawa5, Yoshishige Suzuki1,2,3 (1.AIST, 2.Osaka Univ, 3.CSRN-Osaka, 4.Tohoku Univ. SRIS, 5.Hyogo Pref. Univ.)
キーワード：
magnetic tunnel junctions、artificial spin ice、switching field variation
We fabricated artificial spin ice (ASI) by patterning magnetic tunnel junction (MTJ) films to measure the magnetization process of individual cells by magnetoresistance (MR) measurement. The MTJs had a stacking structure of substrate/buffer layer/Ir-Mn/Co-Fe/Ru/Co-Fe-B/MgO/FeB/cap. The FeB free layer was patterned into stadium-shape cells by microfabrication technique and arranged in honeycomb structures. The ASIs consisted of 72 cells, in which 62 cells’ MR curves were measured at room temperature. The variation of MR and magnetization switching properties were investigated.