講演情報
[25a-P01-49]Fabrication and Characterization of Vertical Spin Valve Devices Based on MnAs/InAs/MnAs/GaAs(111)B with several hundred nanometer width
〇(M2)Thuan Van Pham1, Md Tauhidul Islam1, Soh Komatsu1, Masashi Akabori1 (1.JAIST)
キーワード：
Vertical spin valve、MnAs/InAs Hybrid structure、Spin injection and detection
Ferromagnetic/semiconductor hybrid structures have been paid much attention to because they are applicable to spintronic devices such as spin valve (SV) devices and spin field effect transistors (spin-FETs). We have studied ferromagnetic MnAs/semiconducting InAs hybrid heterostructures on GaAs(111)B for lateral spin-FET application. MnAs is a ferromagnetic material that can act as spin polarizer (source) and detector (drain), and InAs is a semiconductor with narrow bandgap and strong spin-orbit coupling (SOC) which can be used as a channel material to transport rotating spin-polarized carriers following the Rashba effect. We have also developed MnAs/InAs/MnAs double heterostructure on GaAs(111)B substrate using low temperature molecular beam epitaxy. This structure is suitable for vertical SV devices and vertical spin-FETs as well. Our initial goal is to make vertical SV devices with varying the diameter from 200 nm to 400 nm and to measure SV properties.