講演情報
[25p-12P-7]Repeated γ Irradiation and Thermal Annealing via Built-In Thermo-Electric Coolers of Si Avalanche Photodiodes
〇(DC)ShuinJian Wu1, Arya Chowdhury2, Moe Thar Soe1, Alexander Ling1 (1.CQT, NUS, 2.Faculty of Sci, NUS)
キーワード：
avalanche photodiodes、quantum communications、radiation damage
When operating in space, on-board Silicon Geiger-Mode Avalanche Photodiodes
(GM-APDs) are exposed to radiation damage that result in an increase in dark
count rates. Thermal annealing has been found to mitigate the damage, although
prior studies have largely focused on annealing following a single session of proton
irradiation. This work reports that thermal annealing can be performed simply
with the built-in thermo-electric coolers of the GM-APDs. Annealing was also
done in 10 min intervals for a clearer view of the recovery curve. Mitigation of
damage from repeated γ radiation was observed from the: (1) halving of the
increase in dark count rates on average and (2) outperformance of room temperature
annealing (25°C) by 33%. Additionally, we show that heavy doses of γ
radiation (21 krad) have a probability of causing Random Telegraph Signals in
GM-APDs that can be suppressed by lowering the operating temperature.
(GM-APDs) are exposed to radiation damage that result in an increase in dark
count rates. Thermal annealing has been found to mitigate the damage, although
prior studies have largely focused on annealing following a single session of proton
irradiation. This work reports that thermal annealing can be performed simply
with the built-in thermo-electric coolers of the GM-APDs. Annealing was also
done in 10 min intervals for a clearer view of the recovery curve. Mitigation of
damage from repeated γ radiation was observed from the: (1) halving of the
increase in dark count rates on average and (2) outperformance of room temperature
annealing (25°C) by 33%. Additionally, we show that heavy doses of γ
radiation (21 krad) have a probability of causing Random Telegraph Signals in
GM-APDs that can be suppressed by lowering the operating temperature.