講演情報
[15a-PA3-12]Reactive Ion Etching-Assisted Surface Engineering of ALD-SnO2 Electron Transport Layers
〇Yuna Choi1, Yeon Woo Seok1, Yumin Maeng1, Tae Woong Kim1 (1.Konkuk Univ.)
キーワード：
Perovskite solar cell、Atomic layer deposited、Plasma
Perovskite solar cells (PSCs) have attracted significant attention as promising photovoltaic devices. In these cells, the electron transport layer (ETL) plays a crucial role in efficient electron extraction and suppression of interfacial charge recombination. Atomic layer deposited (ALD) SnO2 thin films are widely used as ETLs due to their excellent film uniformity and precise thickness control. However, oxygen vacancies generated during the ALD process act as charge recombination sites, limiting device performance.In this study, we applied reactive ion etching (RIE) based on vacuum system for surface modification of ALD-SnO2 ETLs. The RIE process utilizes chemical reactions by reactive plasma species and physical bombardment by directional ions. Through these combined interactions, oxygen vacancies at the SnO2 surface can be effectively reduced. Unlike solution-based treatments, RIE is performed entirely under vacuum conditions. This maintains the large-area uniformity of ALD films and enables compatibility with continuous in-line processing.After RIE treatment, the oxygen vacancy density in ALD-SnO2 films was reduced, which suppressed negative factors at the perovskite/ETL interface. The optimized device achieved a power conversion efficiency of 23.13% (Jsc: 25.09 mA cm-2, Voc: 1.14 V, FF: 82.3%). Compared to UV–ozone treatment, RIE-treated devices showed a 1.4% absolute improvement in efficiency and retained 92% of their initial efficiency after 30 days. These results demonstrate that RIE is an effective and scalable strategy for improving the interfacial quality of ALD-SnO2 ETLs in PSCs.