講演情報
[15a-PA5-5]Thickness dependence of the passivation performance of non-stoichiometric Cat-CVD silicon nitride films
〇(M1C)Yuehong Shan1, Kensaku Maeda1, Keisuke Ohdaira1 (1.JAIST)
キーワード：
Cat-CVD、silicon nitride passivation
Non-stoichiometric silicon nitride (SiNx) films deposited by catalytic chemical vapor deposition (Cat-CVD) are promising passivation layers for crystalline silicon solar cells. In this study, the thickness dependence of the passivation performance of Si-rich Cat-CVD SiNx films was systematically investigated. Films with various thicknesses were deposited on float-zone and Czochralski silicon wafers and subsequently annealed at 350 degC. Effective minority carrier lifetime was evaluated using microwave photoconductivity decay measurements. The lifetime increased with increasing film thickness in the thin film region and saturated above approximately 150-180 nm, indicating the presence of a critical thickness for effective surface passivation.