講演情報
[16a-S2_201-2]Enhancement of Curie temperature in (In,Fe)Sb by step-flow growth technique
〇Shuzo Oeda1, Kota Ejiri1, Pham Nam Hai1 (1.Science Tokyo)
キーワード：
ferromagnetic semiconductor、(In、Fe)Sb、Curie temperature
Curie temperatures (TC) higher than room temperature have been achieved in (Ga,Fe)Sb and (In,Fe)Sb grown on just-cut substrates. Recently, further improvement of TC has been realized by promoting step-flow growth using vicinal substrates. Indeed, (In,Fe)As and (Ga,Fe)Sb have shown remarkably higher TC compared to those grown on just substrates. Furthermore, p-type (Ga,Fe)Sb has achieved a TC ∼ 530 K, which is significantly higher than room temperature. Therefore, similar improvement in TC can be expected for n-type (In,Fe)Sb by using vicinal substrates.
In this work, we have studied (In0.84,Fe0.16)Sb thin films grown on vicinal GaAs(001) substrates for higher TC. We found that (In0.84,Fe0.16)Sb grown on the vicinal substrate exhibited a high TC (383 K). This value exceeds the TC (335 K) of (In0.84,Fe0.16)Sb grown on a just substrate, indicating a successful improvement in TC. The results of this study indicate that TC can be improved by step-flow growth in (In,Fe)Sb as well, and further enhancement of TC can be expected by increasing the Fe concentration.
In this work, we have studied (In0.84,Fe0.16)Sb thin films grown on vicinal GaAs(001) substrates for higher TC. We found that (In0.84,Fe0.16)Sb grown on the vicinal substrate exhibited a high TC (383 K). This value exceeds the TC (335 K) of (In0.84,Fe0.16)Sb grown on a just substrate, indicating a successful improvement in TC. The results of this study indicate that TC can be improved by step-flow growth in (In,Fe)Sb as well, and further enhancement of TC can be expected by increasing the Fe concentration.