[16a-S2_201-1~13] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

11:15 〜 11:30奨励賞エントリー英語発表

[16a-S2_201-9] Growth and characterization of superconducting Vanadium / semiconductor GaSb heterostructures

〇Kouta Iwakura¹, Ryusei Wakasa¹, Masaaki Tanaka^1,2, Le Duc Anh^1,2 (1.UTokyo, 2.CSRN)

キーワード：

semiconductor、superconductor、MBE

For the realization of error-tolerant topological quantum computers, developing devices composed of superconductor/semiconductor heterostructures attracts much attention. Al/InAs heterostructures are commonly investigated because of their high-quality interface, while its insufficient tolerance of magnetic field limits the topological phase. Type-II superconductor Vanadium (V), whose in-plane critical magnetic field reaches several T in thin films is promising as an alternative to Al, while our previous research revealed that the interface of V/InAs is not atomically abrupt because of the chemical reaction between V and As and coherent growth of V on InAs was not realized. In this work, instead of InAs, we employ GaSb, which has the almost same lattice constant as InAs, in order to avoid the intermixing at the interface. The successful growth of epitaxial V/GaSb heterostructures pave new ways to utilize superconducting V for the applications to quantum devices.