[16a-S4_201-1~13] 10.2 スピン基盤技術・萌芽的デバイス技術

10:00 〜 10:15英語発表

[16a-S4_201-5] Coexistence of large spin Hall angle and long spin diffusion length in B2-ordered Ni-Al alloys

〇Yuki Hibino¹, Junyeon Kim¹, Takao Ochiai¹, Shinji Yuasa¹, Kay Yakushiji¹ (1.AIST)

キーワード：

spin transport、spin Hall effect、spin torque

Spin Hall effect (SHE) is a key technology for spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) which enables fast and reliable magnetization switching. SHE has been investigated in various materials with strong spin-orbit coupling, however, only limited number of materials can be integrated into SOT-MRAM, and new spin Hall materials (SHMs) with larger SHE are required. Here, we propose Al-based B2-ordered alloys, Ni-Al, as a new candidate SHMs for SOT-MRAM application.