[16p-S2_201-1~11] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

14:30 〜 14:45奨励賞エントリー英語発表

[16p-S2_201-3] Long transport of electron spin wave in wire structures based on a (001) GaAs/AlGaAs quantum well

〇Koga Akagi¹, Jun Ishihara¹, Futa Sugawara¹, Yuzo Ohno², Daiki Sekine^1,3, Sota Yamamoto¹, Makoto Kohda^1,3,4,5 (1.Grad. Sch. of Eng., Tohoku Univ., 2.Univ. of Tsukuba, 3.QUARC, QST, 4.CSIS, Tohoku Univ., 5.DEFS, Tohoku Univ.)

キーワード：

Electron spin wave、Spin transport、Semiconductor

Electron spin waves, induced by spin-orbit interaction in the persistent spin helix state, exhibit wave-like characteristics offering potential as information carriers for multiplexed and parallel processing. Although logic operations using spin waves have been proposed, their integration requires extended spin transport lengths. Here, we report unprecedentedly long transport length of electron spin wave by combining drift transport and quasi-one-dimensional confinement effect. Using (001) GaAs/AlGaAs quantum well, we fabricated wire structures (of 5–20 µm wide), designed for the application of longitudinal drift bias. We observed the spatial distributions of electron spins by spatially-resolved magneto-optical Kerr rotation microscopy at 10 K. Obtained electron spin transport length is about 200 µm at the 5 µm-wide wire under high drift bias. This enhancement suggests a synergistic effect of the drift current and the geometric confinement, resulting in long transport of electron spin.