[16p-S2_201-1~11] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

15:15 〜 15:30奨励賞エントリー英語発表

[16p-S2_201-6] Observation of the orbital Hall effect in ZnO using spin-torque ferromagnetic resonance

〇Kazuki Yagyu¹, Ryo Ohshima^1,2, Yoshiharu Wada³, Naoto Yamashita³, Naho Itagaki³, Masashi Shiraishi^1,2 (1.Kyoto Univ., 2.CSRN Kyoto Univ., 3.Kyushu Univ.)

キーワード：

semiconductor、orbital Hall effect、spin-torque ferromagnetic resonance

The orbital Hall effect (OHE), where an external electric field generates a transverse flow of orbital angular momentum (orbital current), is gathering great attention. Unlike the spin Hall effect, which arises from spin-orbit coupling (SOC), the OHE originates from the orbital hybridization. Since orbital current enables controlling the magnetization, materials with weak SOC are available for spin-orbit torque devices, such as MRAM, a non-volatile memory. In this study, we investigate the OHE in ZnO, which exhibits s-p orbital hybridization and high thermal and chemical stability, by using spin-torque ferromagnetic resonance.