講演情報
[16p-S4_201-12]Lateral Spin Injection Devices Made by Epitaxial Phase Separation
〇(M1)Atsunori Naganawa1, Kensuke Hayashi1, Satoshi Iihama1, Takahiro Moriyama1 (1.Nagoya Univ.)
キーワード：
spintronics、spin current、iron oxide
The valence states of iron ions are 2+ and 3+, which result in various crystal structures for iron oxides, such as rock salt (FeO), spinel (Fe3O4), and corundum (Fe2O3). These structures are grown very sensitively on the formation conditions. In this study, we prepared a laterally segregated Fe3O4 - Fe2O3 thin film structure. A template made with a MgAl2O4 (MAO: spinel structure) seed layer on an Al2O3 (corundum structure) substrate was used to control the crystal structure of iron oxides grown on it. Films made on the template possess conductive ferrimagnetic Fe3O4 and insulating antiferromagnetic Fe2O3 areas. We investigated spin wave propagations in Fe2O3 when a spin current is injected laterally from Fe3O4 into Fe2O3 via the anomalous Hall effect.