講演情報
[17a-M_124-3]Thermal evaporation deposition of germanium iodide to enable multi-doping in tin-lead perovskite solar cells
〇(PC)Shahrir Razey Sahamir1, Qing Shen1, Hiroshi Segawa2, Shuzi Hayase1 (1.Univ. of Electro-Com, 2.Univ. of Tokyo)
キーワード：
tin-lead SnPb perovskite、stability、doping strategy
Tin-lead (SnPb) perovskite solar cells (PSCs) performance have progressed beyond 24% performance conversion efficiency (PCE) recently. In our previous studies, we have successfully demonstrated successful strategies in improving the stability and the performance of the SnPb PSCs via germanium iodide (GeI2) doping. Due to the poor solubility of GeI2 in the perovskite precursors, it is difficult to perform multi-doping strategy to further improving the performance of the devices. Hereby, we will introduce an effective implementation of GeI2, externally, in the SnPb device structure via thermal evaporation deposition. To further improve the performance, we employed a thiourea based dopant in the SnPb precursor. The thiourea based dopant in the SnPb films yield the highest PCE of more than 22% due to improved crystallinity and defects mitigation. We will demonstrate the effects of thiourea based dopant in SnPb film fabricated on GeI2 layer by using XPS, XRD and FESEM studies. It is hopeful this report will serve as guideline in order to improve the performance and the stability of the SnPb based PSCs.