[17a-M_374-1~12] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

9:45 〜 10:00奨励賞エントリー英語発表

[17a-M_374-4] Development of FeAlSi Epitaxial Electrodes for Superparamagnetic Tunnel Junctions

〇Ryunosuke Hirama¹, Takahide Kubota², Takafumi Nakano^1,3, Mikihiko Oogane^1,4 (1.Graduate School of Engineering, Tohoku Univ., 2.Advanced Spintronics Medical Engineering, Tohoku Univ., 3.Research Center for Green X-Tech, Tohoku Univ., 4.Center for Science and Innovation in Spintronics, Tohoku Univ.)

キーワード：

Superparamagnetic Tunnel Junctions、FeAlSi、Magnetic Sensors

Superparamagnetic tunnel junctions (SMTJs) are promising components for ultra-low power non-conventional computing and highly sensitive and hysteresis-free magnetic sensors. Our numerical calculations based on the Fokker–Planck equation predict magnetic field resolutions on the order of several tens of nanotesla within a 1 ms measurement time when a material exhibiting near zero magnetocrystalline anisotropy, K₁ ≈ 0, is employed as the free layer. FeAlSi is identified as a promising candidate for this purpose. The fabrication of SMTJs generally requires a non-magnetic metallic buffer layer to enable nanopillar patterning of the magnetic free layer. However, the metal buffer layers for FeAlSi have not been investigated in previous studies. In this work, we investigate metallic buffer layers for FeAlSi and discuss their potential for SMTJ applications.