[17a-M_374-1~12] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

10:00 〜 10:15奨励賞エントリー英語発表

[17a-M_374-5] NiFeB ferromagnetic electrodes for highly-sensitive tunnel-magnetoresistance sensors

〇Soma Takaki¹, Mikihiko Oogane^1,2, Shogo Yamashita^1,3, Takafumi Nakano^1,4 (1.Tohoku Univ., 2.Tohoku Univ. CSIS, 3.Max Planck Inst., 4.Tohoku Univ. Green X-Tech)

キーワード：

spintronics、TMR、magnetic sensor

To enhance the sensitivity of tunnel-magnetoresistance (TMR) sensors using magnetic tunnel junctions (MTJs), free-layer materials achieving both high TMR ratios and low anisotropy fields H_k are required. We focused on amorphous NiFeB as a novel free layer material and systematically evaluated its crystalline structure control via solid-phase epitaxy from MgO interfaces and its magnetoresistance properties. This presentation reports on these results.