講演情報
[17a-PA1-8]Selective Growth of Silicon Carbide Thin Films and Nanowires via Nanoslit Gas-Flow Control
〇Pengyu ZHANG2,1, Wipakorn JEVASUWAN1, Naoki Fukata2,1 (1.NIMS, 2.Univ. of Tsukuba)
キーワード：
Close-spaced technique、Nanowire arrays、Core-shell nanowire
Silicon carbide (SiC) is a promising material for power and harsh-environment electronics, but high-temperature growth on silicon substrates is limited by silicon sublimation, especially for nanowire structures. In this work, we develop a nanoslit gas-flow–regulated growth method based on a modified close-spaced technique (CST). By introducing a nanoscale confined space using Si nanowire arrays, gas transport and local reaction conditions can be effectively controlled. The growth behavior strongly depends on the nanowire pitch: larger pitches lead to hollow SiC nanotubes, while narrower pitches favor core–shell SiC nanowires. This method enables morphology-controlled and selective SiC growth under high-temperature conditions.