[17a-PA2-1~26] 6.4 薄膜新材料

英語発表

[17a-PA2-1] Fabrication of quartz-type GeO₂ thin films at room temperature

〇(D)Busaya Sonjaiyout¹, Masaru Susa¹, Kentaro Kyuno¹ (1.Shibaura Inst. of Technology)

キーワード：

quartz-type GeO2、thin films、water vapor oxidation

A quartz-type GeO₂ is a candidate for next-generation quartz oscillators, piezoelectric materials and SAW devices due to its higher electromechanical coupling coefficient compared with SiO₂, as well as for power electronics and deep-UV optoelectronics as an ultrawide band gap semiconductor [1-3]. However, conventional crystallization of GeO₂ requires high temperatures (~800°C), limiting device integration. In this study, we demonstrate that a Ge thin film with embedded Au nanocrystals can be oxidized into quartz-type GeO₂ at room temperature in water vapor, providing a low-temperature route for GeO₂ integration.