講演情報
[17a-W9_326-9]Interband and Intraband Interpretations of the Berry curvature induced Anomalous Hall response
〇(PC)Arqum Hashmi1, M. Umar Farooq2, Mizuki Tani3, Kazuhiro Yabana4, Tomohito Otobe3, Kenichi L. Ishikawa1 (1.Tokyo Univ., 2.SUSTech, 3.KPSI, QST, 4.Univ. of Tsukuba)
キーワード：
Anomalous Hall effect、Berry curvature、Interband and intraband
Nonlinear anomalous Hall phenomena can originate in inversion asymmetric crystals due to Berry curvature. Previous studies have attributed Berry curvature induced transverse currents to intraband carrier dynamics described by semiclassical equations of motion. In this work, we revisit the origin of anomalous Hall currents from a complementary multiband quantum-mechanical perspective. If we take a comprehensive all-band perspective enabled by time-dependent density functional calculations and define the intraband current as the diagonal part of the total current density matrix obtained through the projection operation, the anomalous Hall responses are attributed to the interband processes, though the decomposition into the intra- and interband components is arbitrary rather than physically essential. It is important to comprehend that single-band models and multiband schemes offer distinct yet complementary perspectives.