講演情報
[17p-M_178-15]Electronic properties of bilayer Janus WSSe under an external electric field
〇YANLIN GAO1, Susumu Okada1 (1.University of Tsukuba)
キーワード：
Bilayer Janus WSSe、Carrier distribution
Janus transition-metal dichalcogenides (TMDs) are atomic-layer materials comprising a transition metal layer sandwiched by different chalcogen layers. This structural asymmetry gives rise to a dipole moment normal to the layer, resulting in physical properties absent in conventional TMDs. This structural asymmetry makes the Janus TMD bilayer (BL) a unique material in which geometric and electronic properties are sensitive to their stacking arrangement [1]. This implies that the field effect on Janus TMD thin films is also sensitive to their stacking arrangement. Thus, this work aims to examine the electronic properties of Janus WSSe thin films under an external electric field in terms of their stacking arrangement by using the density functional theory combined with the effective screening medium method [Figure 1].
Our calculation shows that the distribution of accumulated carriers strongly depends on the interface atomic arrangement and the doping concentration. For the WSSe BL with S/Se heterointerfaces under the hole/hole doping, carriers are highly concentrated on the layer adjacent to the electrode. In contrast, the carriers are distributed on both layers when the WSSe BL with S/S or Se/Se homo-interfaces. In this case, carrier penetration depends on the doping concentration and carrier species.
Our calculation shows that the distribution of accumulated carriers strongly depends on the interface atomic arrangement and the doping concentration. For the WSSe BL with S/Se heterointerfaces under the hole/hole doping, carriers are highly concentrated on the layer adjacent to the electrode. In contrast, the carriers are distributed on both layers when the WSSe BL with S/S or Se/Se homo-interfaces. In this case, carrier penetration depends on the doping concentration and carrier species.