講演情報
[18p-S2_201-2]Magnetoresistance modulation in polycrystalline MoS2 film with the Fermi level control by contact metal
〇(M2)Ruihan Wang1, Iriya Muneta1, Hitoshi Wakabayashi1 (1.Science Tokyo)
キーワード：
MoS2、magnetoresistance
Polycrystalline MoS2 films have attracted attention as a new low-power magnetization switching method because they exhibit a high Curie temperature and allow ferromagnetism to be controlled with an ultra-low current density. Although many theoretical studies and investigations based on magnetization measurements have been conducted on the ferromagnetism of MoS2 films, studies on their magnetotransport properties remain extremely limited. In this study, we investigate the magnetoresistance modulation in polycrystalline MoS2 film with the Fermi level control by contact metal, and find that samples with different contacts exhibit distinct magnetoresistance behaviors and voltage dependences.