[1-1]Negative Resistance by Hot Carrier Annihilation
S. Mitsui(1.Mitsubishi Electric Co., Ltd.)
1969 Conference on Solid State Devices
1969年9月26日〜9月27日Sankei Hall, Tokyo, Japan
当該イベント内で検索します。
検索する
1969 Conference on Solid State Devices
1969年9月26日〜9月27日Sankei Hall, Tokyo, Japan
当該イベント内で検索します。
検索する検索結果(38)
[1-2]Acoustoelectric Oscillation in n -In Sb
T. Arizumi、T. Aoki、K. Hayakawa(1.Nagoya University)
[1-3]Dynamics of Gunn Domains in Functional Bulk Oscillators
M. Shoji(1.Bell Telephone Laboratories)
[1-4]Fabrication of Planar-Type GaAs Bulk Effect Pulse Devices
K. Sekido、M. Takeuchi、Y. Takayama、F. Hasegawa、N. Hayakawa(1.Nippon Electric Co., Ltd.)
[2-1]Possibility of Negative Resistance Arising from Resonant Scattering of Carriers by Internal Impurity Level
T. Shimizu(1.Kanazawa University)
[2-2]Anomalous Domain Modes in CdS Propagating along C-Axis
S. Furukawa、T. Hata、T. Motosugi(1.Tokyo Institute of Technology)
[2-4]Mechanism of Coupling between Space-Charge Waves and Microwaves in a Bulk GaAs Traveling-Wave Amplifier
K. Kumabe、H. Kanbe、S. Ohara(1.Nippon Telegraph and Telephone Public Corporation)
[2-5]Effects of Nonuniform Conductivity on the Velocity-Field Characteristics of GaAs
M. Inoue、J. Shirafuji、Y. Inuishi(1.Osaka University)
[2-6]Pressure Effects on Gunn Devices
K. Nawata、K. Kodaira(1.Nippon Telegraph and Telephone Public Corporation)
[2-7]High Speed MOS Transistors by Electron Beam Exposure System
Y. Tarui、H. Teshima、H. Baba、M. Tamura(1.Electrotechnical Lab.)
[3-1]A Light-Focusing Fiber Guide Prepared by Ion-Exchange Techniques
I. Kitano、K. Koizumi、H. Matsumura、T. Uchida、M. Furukawa(1.Nippn Sheet Glass Co., Ltd.、2.Nippon Electric Co., Ltd.)
[3-2]Silicon Microwave Transistors Made by New Techniques
K. Fujinuma、T. Sakamoto、T. Abe、K. Sato、Y. Omura(1.Tokyo Shibaura Electric Co., Ltd.)
[3-3]ESR of Nitrogen-Ion-Implanted Sllicon
A. Doi、K. Gamo、K. Masuda、S. Namba(1.Osaka University)
[3-4]Defects In Silicon Generated Ion Implantation
T. Tsuchimoto、T. Ikeda、T. Tokuyama(1.Hitachi Ltd.)
[3-5]Germanosilicate Glass Silicon Device Technology
T. Abe、K. Sato、M. Konaka、A. Miyazaki(1.Tokyo Shibaura Electric Co., Ltd.)
[3-6]Bulk Nonlinear Property of Zinc Oxide Ceramics
M. Matsuoka、T. Masuyama、Y. Iida(1.Matsushita Electric Industrial Co., Ltd.)
[4-1]Diffusion Selfaligned MOST; A New Approach for High Speed Device
Y. Tarui、Y. Hayashi、T. Sekigawa(1.Electrotechnical Lab.)
[4-2]A Hybrid Type Field - Effect Transistor
Y. Terui、S. Horiuchi、K. Akiyama(1.Matsushita Electric Industrial Co., Ltd.)
[4-3]Single and Dual Gate FETs for UHF Applications
A. Ohwada、S. Yamamoto、K. Fujinuma、T. Narita(1.Tokyo Shibaura Electric Co., Ltd.)
[4-4]N-Channel MOSIC Utilizing Alumina Film
S. Nishimatsu、T. Tokuyama(1.Hitachi Ltd.)
[4-5]Al2O3-Complementary MOS Transistors
K. Nagano、T. Tanaka(1.Sophia University)
[5-1]GaAs Diffused Diodes for Harmonic Generator of Millimeter - Waves
M. Fujimoto、Y. Sato、Y. Ishii、H. Yamazaki(1.Nippon Telegraph and Telephone Public Corporation)
[5-2]Nonlinear Response of the Avalanche Diode Oscillators
K. Daikoku、Y. Mizushima(1.Nippon Telegraph and Telephone Public Corporation)
[5-3]Conduction Current Waveforms of Avalanche Diodes
M. Matsumura(1.Nippon Electric Co., Ltd.)
[5-4]The Effect of Junction Area of Silicon IMPATT Diodes
M. Kondo、M. Matsumura、Y. Okuto、I. Nagashima(1.Nippon Electric Co., Ltd.)
[5-5]Encapsulated Millimeter - wave Silicon Avalanche Diodes
K. Suzuki、M. Ohmori、T. Ueda(1.Nippon Telegraph and Telephone Public Corporation)
[6-1]Low Temperature Vapor Deposition of ZrO2 Films on Si Surfaces
K. Hoh、T. Sugano(1.University of Tokyo)
[6-2]Negative Mass Effect and the Energy Dispersion of Carriers in MOS Inversion Layers: Possibility of a Novel Solid State Oscillator
H. Maeda(1.Tokyo Shibaura Electric Co., Ltd.)
[6-3]Effect of Heat Treatments on Interface Mobility of Carriers in MOS Structures
T. Sugano、H. Sakaki、K. Hoh(1.University of Tokyo)
[6-4]Lock - On Phenomenon in Amorphous Semiconductors
M. Kikuchi、S. Iizima、M. Sugi、K. Tanaka(1.Electrotechnical Lab.、2.Sophia University)
[6-5]High Power Hybrid IC on Insulated Metal Substrates
N. Miura、Y. Fura、A. Kazami(1.Tokyo Sanyo Electric Co., Ltd.)
[6-6]A New Active Ultrasonic Detector
H. Hayakawa、T. Ishiguro、S. Tanaka、N. Mikoshiba、M. Kikuchi(1.Electrotechnical Lab.)
[7-1]Efficient GaP Red - Emitting Diodes Grown by Liquid - Phase Epitaxy
N. Wakamatsu、K. Maeda、M. Toyama、A. Kasami、M. Naito(1.Tokyo Shibaura Electric Co., Ltd.)
[7-2]Injection Luminescence in GaP Grown by Vapor Transpotation on a Ge Substrate
M. Aoki、H. Kasano(1.University of Tokyo)
[7-3]Conversion of Infrared into Visible Light
T. Kushida、M. Tamatani(1.Tokyo Shibaura Electric Co., Ltd.)
[7-4]New Type Photo Magnetic Diode (PMD)
Y. Otani、K. Matsubara、Y. Nishida(1.Kyoto University)
[7-5]Television Camera Tube with Silicon Electron Multpilication Target
S. Shirouzu、S. Miyashiro、S. Tsuji、S. Horiuchi(1.Tokyo Shibaura Electric Co., Ltd.)
[7-6]Function and Applications of Ferroelastoelectrics
A. Kumada(1.Hitachi Ltd.)
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